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Understanding the role of defects in hybrid organic inorganic perovskites (HOIPs) is critically important to engineer the stability and performance of photovoltaic devices based on HOIPs. Recent reports on multi-cation compositions of general formula (A
1
,A
2
,A
3
,A
4
)Pb(X
1
,X
2
,X
3
)
3
, where the A sites can be occupied by a distribution of 2–4 metallic/organic cations and X sites with halide anions have shown stabilization effects against the well-known methyl ammonium lead triiodide (CH
3
NH
3
PbI
3
), although the underlying mechanism is not fully elucidated. Herein, polycrystalline layers of 4APb(IBr)
3
perovskite, where A is occupied by a combination of Cs
+
(cesium ion), GA
+
(guanidinium), MA
+
(methylammonium), and FA
+
(formamidinium) ions were synthesized. To gain insight on the role of intrinsic defects, electron irradiation was used for introducing point defects in a controlled way in the quadruple-cation HOIPs. Our results show that the engineered defects in perovskites strongly influenced the absorption, photoluminescence, and time-resolved photoluminescence of these materials, probably due to introduction of additional energy levels that modify electronic and light emitting properties of the material. Furthermore, the irradiation-induced defects were found to strongly affect the aging behavior of HOIPs and modify their radiative recombination properties.