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Early fault detection in SiC-MOSFET with application in boost converter/Deteccion de fallas en SiC-Mosfet con aplicacion en un convertidor elevador
Ist Teil von
Revista Facultad de Ingeniería, 2018-06 (87), p.8
Ort / Verlag
Universidad de Antioquia, Facultad de Ingenieria
Erscheinungsjahr
2018
Link zum Volltext
Quelle
EZB Electronic Journals Library
Beschreibungen/Notizen
This paper presents the design of a fault detection circuit applied to a silicon carbide Mosfet (SiC-Mosfet). Fault detection is done by monitoring the behavior of the gate signal. The most important characteristic that has been reported in literature is quick detection since the evaluation is done while the SiC Mosfet is turning-on. With this method fast detection is allowed for short-circuit and open-circuit failure with small times for detection which prevents to spread the failure to the full system. To validate the fault detection circuit a boost converter with SiC-Mosfet was designed. Experimental results validate the reliability of the proposal.