Details

Autor(en) / Beteiligte

• Leroy, F
• Landru, D
• Cheynis, F
• Kononchuk, O
• Müller, P
• Curiotto, S

Titel

Kinetics and coupled dynamics of dewetting and chemical reaction in Si/[Formula omitted]/Si system

Ist Teil von

• Journal of materials science, 2020-12, Vol.55 (34), p.16074

Ort / Verlag

Springer

Erscheinungsjahr

2020

Quelle

SpringerNature Journals

Beschreibungen/Notizen

• We report on the observation of a coupling between the dewetting of a Si layer on [Formula omitted] induced by surface/interface energy minimization and the etching between both materials due to the [Formula omitted] [Formula omitted] reaction. In the limit of a thin [Formula omitted] layer ( [Formula omitted]) sandwiched between a Si layer and a Si handle wafer, the front of Si dewetting and the front of [Formula omitted] etching coexist in a narrow region. The interplay between both phenomena gives rise to specific morphologies. We show that extended Si fingers formed by dewetting are stabilized with respect to Rayleigh-Plateau-type instability over tenth of microns thanks to a localized etching of the [Formula omitted] layer. The breakup of this structure occurs abruptly by an unzipping process combining dewetting and etching phenomena. We also put in evidence that Si rings are created with a thin [Formula omitted] layer in the center. These processes are thermally activated with an activation energy of [Formula omitted] and [Formula omitted], respectively, for dewetting and the etching reaction. All these results highlight the respective roles of wetting and etching in Si/ [Formula omitted]/Si system dynamics and could be a stepping stone for the development of advanced processes based on Silicon-On-Insulator technology.