Details

Autor(en) / Beteiligte

• Il'inskaya, N.D
• Karandashev, S.A
• Lavrov, A.A
• Matveev, B.A
• Remennyi, M.A
• Stus, N.M
• Usikova, A.A

Titel

InAsSbP Photodiodes for 2.6-2.8-[micro]m Wavelengths

Ist Teil von

• Technical physics, 2018-02, Vol.63 (2), p.226

Ort / Verlag

Springer

Erscheinungsjahr

2018

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Research data for photovoltaic, I-V and C-V characteristics of InAsSbP/InAs heterostructure photodiodes that operate at room temperature in the wavelength range 2.6-2.8 [micro]m have been reported. Based on these data and available publications, conclusions have been drawn about the prospects for using these photodiodes in a number of applications. DOI: 10.1134/S1063784218020172