Details

Autor(en) / Beteiligte

• Shamirzaev, T.S
• Galkin, N.G
• Chusovitin, E.A
• Goroshko, D.L
• Shevlyagin, A.V
• Gutakovski, A.K
• Saranin, A.A
• Latyshev, A.V

Titel

Electroluminescent 1.5-µm light-emitting diodes based on [p.sup.+]-Si/NC β-Fe[Si.sub.2]/n-Si structures

Ist Teil von

• Semiconductors (Woodbury, N.Y.), 2015-04, p.508

Ort / Verlag

Springer

Erscheinungsjahr

2015

Quelle

SpringerNature Journals

Beschreibungen/Notizen

• The electroluminescence efficiency of silicon light-emitting diode structures with several layers of β-Fe[Si.sub.2] nanocrystallites embedded in the p--n junction is investigated. The nanocrystallites were formed by either solid-phase epitaxy or a combination of reactive and solid-phase epitaxy. For the structures in which the nanocrystallites were formed by the combined method, electroluminescence is observed only at low temperatures (below 70K). This is indicative of a high concentration of defects acting as nonradiative-recombination centers. For the structures with nanocrystallites formed by solid-phase epitaxy, intense electroluminescence is observed up to room temperature. The dependence of the electroluminescence intensity on the size of the nanocrystallites is studied.