Details

Autor(en) / Beteiligte

• Goncalves, L.M.
• Couto, C.
• Alpuim, P.
• Rolo, A.G.
• Völklein, F.
• Correia, J.H.

Titel

Optimization of thermoelectric properties on Bi 2Te 3 thin films deposited by thermal co-evaporation

Ist Teil von

• Thin solid films, 2010, Vol.518 (10), p.2816-2821

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2010

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The optimization of the thermal co-evaporation deposition process for n-type bismuth telluride (Bi 2Te 3) thin films deposited onto polyimide substrates and intended for thermoelectric applications is reported. The influence of deposition parameters (evaporation rate and substrate temperature) on film composition and thermoelectric properties was studied for optimal thermoelectric performance. Energy-dispersive X-ray spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy and Raman spectroscopy confirmed the formation of Bi 2Te 3 thin films. Seebeck coefficient (up to 250 μV K − 1 ), in-plane electrical resistivity (≈10 μΩ m), carrier concentration (3×10 19–20×10 19 cm − 3 ) and Hall mobility (80–170 cm 2 V − 1 s − 1 ) were measured at room temperature for selected Bi 2Te 3 samples.