Details

Autor(en) / Beteiligte

• Jung, Minhyun
• Kim, Seungyeob
• Hwang, Junghyeon
• Kim, Chaeheon
• Kim, Hye Jin
• Kim, Yun-Jeong
• Jeon, Sanghun

Titel

Monolithic three-dimensional hafnia-based artificial nerve system

Ist Teil von

• Nano energy, 2024-07, Vol.126, Article 109643

Ort / Verlag

Elsevier Ltd

Erscheinungsjahr

2024

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Artificial nerve systems that mimic the tactile perception ability of human skin could be adopted in the realization of devices for a hyperconnected society, including prosthetic devices, interfaces for virtual reality, and smart sensors. The system consists of a pressure sensor, memory, and signal processing circuit, which possess the capability of generating sensory neuron-like signals. Although technological advances have been made in semiconductor-based memory and transistors over the decades, sensor technology is still relying on micro-electromechanical systems, which are hard to realize miniaturization/high-density and high-performance technology. Here, we demonstrate a monolithic three-dimensional integrated artificial nerve on the basis of ferroelectric HfxZr1-xO2 for use in the core element of neuromorphic memory and a self-powered piezoelectric pressure sensor. The morphotropic phase boundary (MPB) state of hafnia film was formed between orthorhombic and tetragonal phases for high piezoelectric performance. The MPB-based sensor was integrated with self-rectifying ferroelectric tunnel junction memory and silicon-based ring oscillator. We realized a frequency-modulated pulse-like synaptic signal with pressure detection ability over a wide range of 1–50 kPa and a good sensitivity of 0.35 mV/kPa. Also, we demonstrate the real-time frequency-modulated operation of the artificial nerve system by adjusting the functional properties of the hafnia films. [Display omitted] •Semiconductor-process-based artificial nerve systems can accelerate the realization of electronic skin technology.•Monolithic-three-dimensional integrated artificial nerve systems can be used in the realization of human-machine interfaces.•Hafnia can be adopted as both a sensor and a memory device by utilizing the composition ratio and thickness of the thin film.•The dielectric and piezoelectric characteristics of hafnia materials are maximized near the morphotropic phase boundary.•Microwave annealing has the potential for low-temperature thin film crystallization with uniform volumetric heating behavior.