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The influence of the annealing conditions on the photoluminescence of ion-implanted SiO 2:Si nanosystem at additional phosphorus implantation
Ist Teil von
Physica. E, Low-dimensional systems & nanostructures, 2003, Vol.16 (3), p.410-413
Ort / Verlag
Elsevier B.V
Erscheinungsjahr
2003
Quelle
Elsevier ScienceDirect Journals
Beschreibungen/Notizen
The influence of P ion doping on the photoluminescence (PL) of the system of nanocrystals in SiO
2 matrix (SiO
2:Si) both without annealing and after annealing at various temperatures (provided before and after additional P implantation) is investigated. The Si and P implantation was carried out with ion energies of
150
keV
and doses
Φ
Si
=10
17
cm
−2
and
Φ
P=(0.1–
300)×10
14
cm
−2
(current density
j⩽3
μA
cm
−2
). The system after Si implantation was formed at 1000°C and
1100°
C
(2
h)
. For the case of SiO
2:Si system as-implanted by P, the intensity of PL was drastically quenched, but partially retained. As for the step-by-step annealing (at progressively increased temperatures) carried out after P implantation, the sign and degree of doping effect change with annealing temperature. The possible mechanisms of these features are discussed.