Details

Autor(en) / Beteiligte

• Tetelbaum, D.I.
• Trushin, S.A.
• Mikhaylov, A.N.
• Vasil'ev, V.K.
• Kachurin, G.A.
• Yanovskaya, S.G.
• Gaponova, D.M.

Titel

The influence of the annealing conditions on the photoluminescence of ion-implanted SiO 2:Si nanosystem at additional phosphorus implantation

Ist Teil von

• Physica. E, Low-dimensional systems & nanostructures, 2003, Vol.16 (3), p.410-413

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2003

Quelle

Elsevier ScienceDirect Journals

Beschreibungen/Notizen

• The influence of P ion doping on the photoluminescence (PL) of the system of nanocrystals in SiO 2 matrix (SiO 2:Si) both without annealing and after annealing at various temperatures (provided before and after additional P implantation) is investigated. The Si and P implantation was carried out with ion energies of 150 keV and doses Φ Si =10 17 cm −2 and Φ P=(0.1– 300)×10 14 cm −2 (current density j⩽3 μA cm −2 ). The system after Si implantation was formed at 1000°C and 1100° C (2 h) . For the case of SiO 2:Si system as-implanted by P, the intensity of PL was drastically quenched, but partially retained. As for the step-by-step annealing (at progressively increased temperatures) carried out after P implantation, the sign and degree of doping effect change with annealing temperature. The possible mechanisms of these features are discussed.