Details

Autor(en) / Beteiligte

• Hoffman, C.A.
• Meyer, J.R.
• Youngdale, E.R.
• Bartoli, F.J.
• Miles, R.H.
• Ram-Mohan, L.R.

Titel

Electron transport in InAs/Ga 1- xIn xSb superlattices

Ist Teil von

• Solid-state electronics, 1994, Vol.37 (4), p.1203-1206

Ort / Verlag

Elsevier Ltd

Erscheinungsjahr

1994

Link zum Volltext

Quelle

Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)

Beschreibungen/Notizen

• We have experimentally investigated the electron transport properties of a series of n-typeInAs/Ga 1- x In x Sb superlattices with InAs thicknesses ( d 1) between 25 and 86 Å and a fixed Ga 1- x In x Sb thickness ( d 2) of 25 Å. Interface roughness scattering is found to dominate the electron mobility ( μ n ), but with a much weaker dependence on layer thickness than the conventional d 1 6. We observe an abrupt decrease in μ n ( d 1) at the semiconductor-to-semimetal transition point and the coexistence of two electron species in semimetallic samples. All of these findings can be understood by considering the theoretical band structures for InAs/Ga 1- x In x Sb superlattices with thin d 2, which differ considerably from those in InAs/GaSb structures with comparable energy gaps and thick d 2, but are strikingly similar to results for HgTe/CdTe. Since the system is strongly 3D rather than 2D in character, it is surprising that in some samples the quantum oscillations in the Hall conductivity are much larger than those in the diagonal conductivity.