Details

Autor(en) / Beteiligte

• Petrone, Nicholas
• Meric, Inanc
• Chari, Tarun
• Shepard, Kenneth L.
• Hone, James

Titel

Graphene Field-Effect Transistors for Radio-Frequency Flexible Electronics

Ist Teil von

• IEEE journal of the Electron Devices Society, 2015-01, Vol.3 (1), p.44-48

Ort / Verlag

IEEE

Erscheinungsjahr

2015

Link zum Volltext

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• Flexible radio-frequency (RF) electronics require materials which possess both exceptional electronic properties and high-strain limits. While flexible graphene field-effect transistors (GFETs) have demonstrated significantly higher strain limits than FETs fabricated from thin films of Si and III-V semiconductors, to date RF performance has been comparatively worse, limited to the low GHz frequency range. However, flexible GFETs have only been fabricated with modestly scaled channel lengths. In this paper, we fabricate GFETs on flexible substrates with short channel lengths of 260 nm. These devices demonstrate extrinsic unity-power-gain frequencies, f max , up to 7.6 GHz and strain limits of 2%, representing strain limits an order of magnitude higher than the flexible technology with next highest reported f max .