Details

Autor(en) / Beteiligte

• Chang, Lin
• Xie, Weiqiang
• Shu, Haowen
• Yang, Qi-Fan
• Shen, Boqiang
• Boes, Andreas
• Peters, Jon D
• Jin, Warren
• Xiang, Chao
• Liu, Songtao
• Moille, Gregory
• Yu, Su-Peng
• Wang, Xingjun
• Srinivasan, Kartik
• Papp, Scott B
• Vahala, Kerry
• Bowers, John E

Titel

Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators

Ist Teil von

• Nature communications, 2020-03, Vol.11 (1), p.1331-1331, Article 1331

Ort / Verlag

England: Nature Publishing Group

Erscheinungsjahr

2020

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Recent advances in nonlinear optics have revolutionized integrated photonics, providing on-chip solutions to a wide range of new applications. Currently, state of the art integrated nonlinear photonic devices are mainly based on dielectric material platforms, such as Si N and SiO . While semiconductor materials feature much higher nonlinear coefficients and convenience in active integration, they have suffered from high waveguide losses that prevent the realization of efficient nonlinear processes on-chip. Here, we challenge this status quo and demonstrate a low loss AlGaAs-on-insulator platform with anomalous dispersion and quality (Q) factors beyond 1.5 × 10 . Such a high quality factor, combined with high nonlinear coefficient and small mode volume, enabled us to demonstrate a Kerr frequency comb threshold of only ∼36 µW in a resonator with a 1 THz free spectral range, ∼100 times lower compared to that in previous semiconductor platforms. Moreover, combs with broad spans (>250 nm) have been generated with a pump power of ∼300 µW, which is lower than the threshold power of state-of the-art dielectric micro combs. A soliton-step transition has also been observed for the first time in an AlGaAs resonator.