Details

Autor(en) / Beteiligte

• Chang, Ming-Chiang
• Ho, Po-Hsun
• Tseng, Mao-Feng
• Lin, Fang-Yuan
• Hou, Cheng-Hung
• Lin, I-Kuan
• Wang, Hsin
• Huang, Pin-Pin
• Chiang, Chun-Hao
• Yang, Yueh-Chiang
• Wang, I-Ta
• Du, He-Yun
• Wen, Cheng-Yen
• Shyue, Jing-Jong
• Chen, Chun-Wei
• Chen, Kuei-Hsien
• Chiu, Po-Wen
• Chen, Li-Chyong

Titel

Fast growth of large-grain and continuous MoS2 films through a self-capping vapor-liquid-solid method

Ist Teil von

• Nature communications, 2020-07, Vol.11 (1), p.3682-3682, Article 3682

Ort / Verlag

London: Nature Publishing Group

Erscheinungsjahr

2020

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Abstract Most chemical vapor deposition methods for transition metal dichalcogenides use an extremely small amount of precursor to render large single-crystal flakes, which usually causes low coverage of the materials on the substrate. In this study, a self-capping vapor-liquid-solid reaction is proposed to fabricate large-grain, continuous MoS 2 films. An intermediate liquid phase-Na 2 Mo 2 O 7 is formed through a eutectic reaction of MoO 3 and NaF, followed by being sulfurized into MoS 2 . The as-formed MoS 2 seeds function as a capping layer that reduces the nucleation density and promotes lateral growth. By tuning the driving force of the reaction, large mono/bilayer (1.1 mm/200 μm) flakes or full-coverage films (with a record-high average grain size of 450 μm) can be grown on centimeter-scale substrates. The field-effect transistors fabricated from the full-coverage films show high mobility (33 and 49 cm 2 V −1 s −1 for the mono and bilayer regions) and on/off ratio (1 ~ 5 × 10 8 ) across a 1.5 cm × 1.5 cm region.