Details

Autor(en) / Beteiligte

• Jia, Hujun
• Dong, Mengyu
• Wang, Xiaowei
• Zhu, Shunwei
• Yang, Yintang

Titel

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Ist Teil von

• Micromachines (Basel), 2021-04, Vol.12 (5), p.488

Ort / Verlag

Switzerland: MDPI AG

Erscheinungsjahr

2021

Link zum Volltext

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (I ) and transconductance (g ) by adding a heavily doped region, reduces the gate-source capacitance (C ) by adding a lightly doped region and improves the breakdown voltage (V ) by embedding an insulated region (Si N ). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (f ), the maximum power added efficiency and the maximum theoretical output power density (P ) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure.