Details

Autor(en) / Beteiligte

• Tillement, Jules
• Cervera, Cyril
• Baylet, Jacques
• Jany, Christophe
• Nardelli, François
• Di Rito, Thomas
• Georges, Sylvain
• Mugny, Gabriel
• Saxod, Olivier
• Gravrand, Olivier
• Baron, Thierry
• Roy, François
• Boeuf, Frédéric

Titel

Design and Characterization of 5 μm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing

Ist Teil von

• Sensors (Basel, Switzerland), 2023-11, Vol.23 (22), p.9219

Ort / Verlag

Basel: MDPI AG

Erscheinungsjahr

2023

Link zum Volltext

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• This paper presents the complete design, fabrication, and characterization of a shallow-mesa photodiode for short-wave infra-red (SWIR) sensing. We characterized and demonstrated photodiodes collecting 1.55 μm photons with a pixel pitch as small as 3 μm. For a 5 μm pixel pitch photodiode, we measured the external quantum efficiency reaching as high as 54%. With substrate removal and an ideal anti-reflective coating, we estimated the internal quantum efficiency as achieving 77% at 1.55 μm. The best measured dark current density reached 5 nA/cm2 at −0.1 V and at 23 °C. The main contributors responsible for this dark current were investigated through the study of its evolution with temperature. We also highlight the importance of passivation with a perimetric contribution analysis and the correlation between MIS capacitance characterization and dark current performance.