Details

Autor(en) / Beteiligte

• Mondal, Debasish
• Mahapatra, Smruti Rekha
• Derrico, Abigail M.
• Rai, Rajeev Kumar
• Paudel, Jay R.
• Schlueter, Christoph
• Gloskovskii, Andrei
• Banerjee, Rajdeep
• Hariki, Atsushi
• DeGroot, Frank M. F.
• Sarma, D. D.
• Narayan, Awadhesh
• Nukala, Pavan
• Gray, Alexander X.
• Aetukuri, Naga Phani B.

Titel

Modulation-doping a correlated electron insulator

Ist Teil von

• Nature communications, 2023-10, Vol.14 (1), p.6210-6210, Article 6210

Ort / Verlag

London: Nature Publishing Group

Erscheinungsjahr

2023

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Abstract Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO 2 ) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO 2 —especially without inducing structural changes—has been a long-standing challenge. In this work, we design and synthesize modulation-doped VO 2 -based thin film heterostructures that closely emulate a textbook example of filling control in a correlated electron insulator. Using a combination of charge transport, hard X-ray photoelectron spectroscopy, and structural characterization, we show that the insulating state can be doped to achieve carrier densities greater than 5 × 10 21  cm −3 without inducing any measurable structural changes. We find that the MIT temperature (T MIT ) continuously decreases with increasing carrier concentration. Remarkably, the insulating state is robust even at doping concentrations as high as ~0.2 e − /vanadium. Finally, our work reveals modulation-doping as a viable method for electronic control of phase transitions in correlated electron oxides with the potential for use in future devices based on electric-field controlled phase transitions.