Details

Autor(en) / Beteiligte

• Qin, Haihong
• Wang, Wenlu
• Peng, Zihe
• Liu, Ao
• Bai, Song

Titel

Characterization and optimization of gate driver turn-off voltage for eGaN HEMTs in a phase-leg configuration

Ist Teil von

• Energy reports, 2022-04, Vol.8, p.908-919

Ort / Verlag

Elsevier Ltd

Erscheinungsjahr

2022

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Affected by high switching speed and parasitic parameters, crosstalk problem of eGaN HEMT in a phase-leg configuration cannot be ignored. By decreasing gate driver turn-off voltage, the false turn-on phenomenon of device caused by crosstalk can be avoided, but it is hard to realize the minimization of total power loss. Thus, we analyze the influence of gate driver turn-off voltage on eGaN HEMT reverse conduction loss, switching loss and crosstalk voltage, and propose an optimized design rules for determining turn-off voltage value in a phase-leg configuration. By reasonably choosing gate driver turn-off voltage, a balance between optimal loss and reliable operation is achieved, thereby effectively alleviating the conflict between efficiency and reliability in the power electronic system.