Details

Autor(en) / Beteiligte

• Simon, John
• Schulte, Kevin
• Horowitz, Kelsey
• Remo, Timothy
• Young, David
• Ptak, Aaron

Titel

III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy

Ist Teil von

• Crystals (Basel), 2019-01, Vol.9 (1), p.3

Ort / Verlag

Basel: MDPI AG

Erscheinungsjahr

2019

Link zum Volltext

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market.