Details

Autor(en) / Beteiligte

• Zeng, Long‐Hui
• Chen, Qing‐Ming
• Zhang, Zhi‐Xiang
• Wu, Di
• Yuan, Huiyu
• Li, Yan‐Yong
• Qarony, Wayesh
• Lau, Shu Ping
• Luo, Lin‐Bao
• Tsang, Yuen Hong

Titel

Multilayered PdSe2/Perovskite Schottky Junction for Fast, Self‐Powered, Polarization‐Sensitive, Broadband Photodetectors, and Image Sensor Application

Ist Teil von

• Advanced science, 2019-10, Vol.6 (19), p.1901134-n/a

Ort / Verlag

Hoboken: John Wiley and Sons Inc

Erscheinungsjahr

2019

Quelle

Wiley Online Library Journals

Beschreibungen/Notizen

• Group‐10 transition metal dichalcogenides (TMDs) with distinct optical and tunable electrical properties have exhibited great potential for various optoelectronic applications. Herein, a self‐powered photodetector is developed with broadband response ranging from deep ultraviolet to near‐infrared by combining FA1−xCsxPbI3 perovskite with PdSe2 layer, a newly discovered TMDs material. Optoelectronic characterization reveals that the as‐assembled PdSe2/perovskite Schottky junction is sensitive to light illumination ranging from 200 to 1550 nm, with the highest sensitivity centered at ≈800 nm. The device also shows a large on/off ratio of ≈104, a high responsivity (R) of 313 mA W−1, a decent specific detectivity (D*) of ≈1013 Jones, and a rapid response speed of 3.5/4 µs. These figures of merit are comparable with or much better than most of the previously reported perovskite detectors. In addition, the PdSe2/perovskite device exhibits obvious sensitivity to polarized light, with a polarization sensitivity of 6.04. Finally, the PdSe2/perovskite detector can readily record five “P,” “O,” “L,” “Y,” and “U” images sequentially produced by 808 nm. These results suggest that the present PdSe2/perovskite Schottky junction photodetectors may be useful for assembly of optoelectronic system applications in near future. A large‐area, highly polarization‐sensitive and broadband photodetector based on multilayered PdSe2/perovskite device is demonstrated. From optoelectronic characterization, the device achieves an impressive specific detectivity of ≈1013 Jones, a polarization sensitivity as high as 6.04, and a fast response speed of 3.5/4 µs. Further study reveals that the present device is potentially important for image sensor applications.