Details

Autor(en) / Beteiligte

• Goossens, Anouk S.
• Ahmadi, Majid
• Gupta, Divyanshu
• Bhaduri, Ishitro
• Kooi, Bart J.
• Banerjee, Tamalika

Titel

Memristive Memory Enhancement by Device Miniaturization for Neuromorphic Computing

Ist Teil von

• Advanced electronic materials, 2023-04, Vol.9 (4), p.n/a

Ort / Verlag

Seoul: John Wiley & Sons, Inc

Erscheinungsjahr

2023

Quelle

Wiley Online Library

Beschreibungen/Notizen

• The areal footprint of memristors is a key consideration in material‐based neuromorphic computing and large‐scale architecture integration. Electronic transport in the most widely investigated memristive devices is mediated by filaments, posing a challenge to their scalability in architecture implementation. Here, a compelling alternative memristive device is presented and it is demonstrated that areal downscaling leads to enhancement in the memristive memory window, while maintaining analog behavior, contrary to expectations. The device designs directly integrated on semiconducting Nb‐doped SrTiO3 (Nb:STO) allows leveraging electric field effects at edges, increasing the dynamic range in smaller devices. The findings are substantiated by studying the microscopic nature of switching using scanning transmission electron microscopy, in different resistive states, revealing an interfacial layer whose physical extent is influenced by applied electric fields. The ability of Nb:STO memristors to satisfy hardware and software requirements with downscaling, while significantly enhancing memristive functionalities, make them strong contenders for non‐von‐Neumann computing, beyond complementary metal–oxide–semiconductor. The ability to increase the resistance window in interface memristors by device miniaturization with high endurance and low variability is demonstrated. Direct integration on a semiconducting platform of Nb‐doped SrTiO3 allows for locally enhanced fields to tune the interfacial energy landscape. Scanning transmission electron microscopy shows an oxygen‐deficient interfacial layer, which is influenced by electric field and mediates switching.