Details

Autor(en) / Beteiligte

• Chang, T.-C.
• Tsao, Y.-C.
• Chen, P.-H.
• Tai, M.-C.
• Huang, S.-P.
• Su, W.-C.
• Chen, G.-F.

Titel

Flexible low-temperature polycrystalline silicon thin-film transistors

Ist Teil von

• Materials today advances, 2020-03, Vol.5, p.100040, Article 100040

Ort / Verlag

Elsevier Ltd

Erscheinungsjahr

2020

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• In today's society, displays are indispensable for digital interaction and personal contact. Therefore, the development of displays is an urgent need for the next generation. Leading the commercialization trends is the development of industrial, high-resolution, portable, and multifunctional displays. Moreover, for small-size portable displays, the most critical factor affecting future applications is their flexibility. Among the various materials that can act as the channel layer, low-temperature polycrystalline silicon (LTPS) is a potential candidate for next-generation portable displays, which require high resolution and stable reliability, and which can achieve virtual reality applications. This article is a review of the development of the LTPS thin-film transistors (TFTs) on soft and flexible electronics, especially the effect of mechanical strain. This article starts by providing an overview of the difficulties in fabricating LTPS TFTs on flexible substrates. The physical mechanism corresponding to each degradation caused by mechanical stress is presented next. Finally, to support the development of the flexible technologies and realize their commercialization, methods to overcome these mechanical strain-induced degradations are reported in three different aspects by understanding the physical degradation model.