Nanoscale research letters, 2019-10, Vol.14 (1), p.1-8, Article 330
2019
Details
- Autor(en) / Beteiligte
- Titel
- Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions
- Ist Teil von
- Nanoscale research letters, 2019-10, Vol.14 (1), p.1-8, Article 330
- Ort / Verlag
- New York: Springer US
- Erscheinungsjahr
- 2019
- Link zum Volltext
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposition (ALD) technique. This paper aims at presenting correlated structural/electrical studies for the passivation effect of alumina on Si junctions to obtain optimal thickness of alumina passivation layer. High-resolution transmission electron microscope (HRTEM) observations coupled with energy dispersive X-ray (EDX) measurements are used to determine the thickness of alumina at atomic scale. The correlated electrical parameters are measured with both solar simulator and Sinton’s Suns-Voc measurements. Finally, an optimum alumina thickness of 1.2 nm is thus evidenced.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 1931-7573eISSN: 1556-276XDOI: 10.1186/s11671-019-3160-2Titel-ID: cdi_doaj_primary_oai_doaj_org_article_8e7082a42d8c456aae0234a052efbd2f
- Format
- –
- Schlagworte
- Alumina, Alumina layer, Aluminum, Aluminum oxide, Atomic layer deposition, Atomic layer epitaxy, Chemical Sciences, Chemistry and Materials Science, Computational Physics, Condensed Matter, Correlation analysis, Electric contacts, Electrical junctions, Electrical studies, Electromagnetism, Energy transmission, Engineering Sciences, Interfaces, Material chemistry, Materials, Materials Science, Micro and nanotechnologies, Microelectronics, Molecular Medicine, Nano Express, Nanochemistry, Nanoscale Science and Technology, Nanotechnology, Nanotechnology and Microengineering, Optics, Optimization, P-n junctions, Parameters, Passivity, Photonic, Physics, Silicon, Silicon junctions, Silicon p-n junction, Solar simulators, Structural/electrical properties, Surface passivation, Thickness, VOCs, Volatile organic compounds