Details
- Autor(en) / Beteiligte
- Titel
- Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices
- Ist Teil von
- Materials, 2020-12, Vol.13 (23), p.5571
- Ort / Verlag
- Switzerland: MDPI AG
- Erscheinungsjahr
- 2020
- Link zum Volltext
- Quelle
- EZB Electronic Journals Library
- Beschreibungen/Notizen
- The development of novel dielectric materials with reliable dielectric properties and low-temperature processibility is crucial to manufacturing flexible and high-performance organic thin-film transistors (OTFTs) for next-generation roll-to-roll organic electronics. Here, we investigate the solution-based fabrication of high-k aluminum oxide (Al O ) thin films for high-performance OTFTs. Nanocluster-based Al O films fabricated by highly energetic photochemical activation, which allows low-temperature processing, are compared to the conventional nitrate-based Al O films. A wide array of spectroscopic and surface analyses show that ultralow-temperature photochemical activation (<60 °C) induces the decomposition of chemical impurities and causes the densification of the metal-oxide film, resulting in a highly dense high-k Al O dielectric layer from Al-13 nanocluster-based solutions. The fabricated nanocluster-based Al O films exhibit a low leakage current density (<10 A/cm ) at 2 MV/cm and high dielectric breakdown strength (>6 MV/cm). Using this dielectric layer, precisely aligned microrod-shaped 2,7-dioctyl[1]benzothieno [3,2-b][1] benzothiophene (C8-BTBT) single-crystal OTFTs were fabricated via solvent vapor annealing and photochemical patterning of the sacrificial layer.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 1996-1944eISSN: 1996-1944DOI: 10.3390/ma13235571Titel-ID: cdi_doaj_primary_oai_doaj_org_article_763c7c59ab4a48e8a4e8990743ac689d
- Format
- –
- Schlagworte
- Aluminum, Aluminum oxide, Annealing, Benzothiophene, Carbon, Communication, deep ultraviolet (DUV) photochemical activation, Densification, Dielectric breakdown, Dielectric properties, Dielectric strength, Electronic devices, Electronics, Fourier transforms, Leakage current, Low temperature, low-temperature process, Metal oxides, Microscopy, Nanoclusters, Nitrates, Nitrogen, organic thin-film transistor, Oxide coatings, Polymers, Semiconductor devices, Semiconductors, Silicon wafers, Single crystals, single-crystal organic semiconductor, solution-processed metal-oxide gate dielectrics, Solvents, Spectrum analysis, Thin film transistors