Details

Autor(en) / Beteiligte

• Yang, Zhaoliang
• Wang, Xiaomin
• Chen, Yuzhong
• Zheng, Zhenfa
• Chen, Zeng
• Xu, Wenqi
• Liu, Weimin
• Yang, Yang Michael
• Zhao, Jin
• Chen, Tao
• Zhu, Haiming

Titel

Ultrafast self-trapping of photoexcited carriers sets the upper limit on antimony trisulfide photovoltaic devices

Ist Teil von

• Nature communications, 2019-10, Vol.10 (1), p.4540-8, Article 4540

Ort / Verlag

England: Nature Publishing Group

Erscheinungsjahr

2019

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Antimony trisulfide (Sb S ) is considered to be a promising photovoltaic material; however, the performance is yet to be satisfactory. Poor power conversion efficiency and large open circuit voltage loss have been usually ascribed to interface and bulk extrinsic defects By performing a spectroscopy study on Sb S polycrystalline films and single crystal, we show commonly existed characteristics including redshifted photoluminescence with 0.6 eV Stokes shift, and a few picosecond carrier trapping without saturation at carrier density as high as approximately 10  cm . These features, together with polarized trap emission from Sb S single crystal, strongly suggest that photoexcited carriers in Sb S are intrinsically self-trapped by lattice deformation, instead of by extrinsic defects. The proposed self-trapping explains spectroscopic results and rationalizes the large open circuit voltage loss and near-unity carrier collection efficiency in Sb S thin film solar cells. Self-trapping sets the upper limit on maximum open circuit voltage (approximately 0.8 V) and thus power conversion efficiency (approximately 16 %) for Sb S solar cells.