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Epitaxial Growth of Bi2Se3 Infrared Transparent Conductive Film and Heterojunction Diode by Molecular Beam Epitaxy
Ist Teil von
Frontiers in chemistry, 2022-01, Vol.10, p.847972-847972
Ort / Verlag
Frontiers Media S.A
Erscheinungsjahr
2022
Quelle
EZB Electronic Journals Library
Beschreibungen/Notizen
Epitaxial
n
-type infrared transparent conductive Bi
2
Se
3
thin film was cultivated by molecular beam epitaxy (MBE) method on Al
2
O
3
(001) substrate. The orientation between Bi
2
Se
3
and the substrate is Bi
2
Se
3
(001)//Al
2
O
3
(1
2
¯
10). Conducting mechanism ensued the small-polaron hopping mechanism, with an activation energy of 34 meV. The film demonstrates conductivity of
n
-type, and the resistivity is 7 × 10
−4
Ωcm at room temperature. The Film exhibits an excellent carrier mobility of 1,015 cm
2
/Vs at room temperature and retains optical transparency in the near-infrared (>70%) and far-infrared (>85%) ranges. To the best of our knowledge, the Bi
2
Se
3
film yields the best result in the realm of
n
-type Infrared transparent conductive thin films generated through either physical or chemical methods. To demonstrate the application of such films, we produced N-Bi
2
Se
3
/P-CuScO
2
heterojunction diode device, the ∼3.3 V threshold voltage of which conformed fairly well with the CuScO
2
bandgap value. The high optical transparency and conductivity of Bi
2
Se
3
film make it very promising for optoelectronic applications, where a wide wavelength range from near-infrared to far-infrared is required.