Details

Autor(en) / Beteiligte

• Mosbahi, H.
• Charfeddine, M.
• Gassoumi, M.
• Mejri, H.
• Gaquière, Christophe
• Grimbert, Bertrand
• Zaidi, M.A.
• Maaref, H.

Titel

Effect of passivation on microwave power performances of AlGaN/GaN/Si HEMTs

Ist Teil von

• Sensors & transducers, 2014-05, Vol.27 (Special Issue), p.277-279

Ort / Verlag

IFSA Publishing, S.L

Erscheinungsjahr

2014

Link zum Volltext

Quelle

EZB Free E-Journals

Beschreibungen/Notizen

• This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using SiO2/SiN dielectric layers grown by plasma enhanced chemical vapor deposition. The direct current measurement, pulsed characteristics and microwave small-signal characteristics were studied before and after passivation. An improvement of drain-source current density and the extrinsic transconductance was observed on the passivated HEMTs when compared with the unpassivated HEMTs. An enhancement of cut-off frequency (ft) and maximum power gain (fmax) was also observed for the devices with full SiO2/SiN passivation. A good correlation is found between pulsed and power measurements. Copyright © 2014 IFSA Publishing, S. L.