Nanophotonics (Berlin, Germany), 2020-07, Vol.9 (7), p.1963-1972
2020
Details
- Autor(en) / Beteiligte
- Titel
- Quantum confinement-induced enhanced nonlinearity and carrier lifetime modulation in two-dimensional tin sulfide
- Ist Teil von
- Nanophotonics (Berlin, Germany), 2020-07, Vol.9 (7), p.1963-1972
- Ort / Verlag
- Berlin: De Gruyter
- Erscheinungsjahr
- 2020
- Link zum Volltext
- Quelle
- Free E-Journal (出版社公開部分のみ）
- Beschreibungen/Notizen
- Two-dimensional tin sulfide (SnS), as a black phosphorus-analogue binary semiconductor, has received considerable attention in photonics and optoelectronics. Herein, the third-order nonlinearity susceptibility χ is enhanced from −(6.88 ± 0.10) × 10 esu to −(15.90 ± 0.27) × 10 esu by the size-related quantum confinement in layered SnS nanosheets. Due to the energy level alignment, a phonon-bottleneck effect is observed, which leads to a prolonged carrier lifetime. These results provide a platform for actively tuning the linear and nonlinear optics, and pave the way for designing SnS-based tunable and anisotropic optoelectronic devices.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 2192-8606eISSN: 2192-8614DOI: 10.1515/nanoph-2019-0448Titel-ID: cdi_doaj_primary_oai_doaj_org_article_1d4f9f584a794e608cde19d693ac47c6
- Format
- –
- Schlagworte
- carrier dynamics, Carrier lifetime, Collaboration, Electromagnetism, Energy levels, Graphene, Laboratories, Morphology, Nonlinear optics, Nonlinearity, Optics, Optoelectronic devices, Optoelectronics, Physics, Quantum confinement, Quantum dots, Scanning electron microscopy, third-order nonlinearity, tin sulfide (SnS), two-dimensional