Details

Autor(en) / Beteiligte

• Khan, Sobia Ali
• Hussain, Fayyaz
• Chung, Daewon
• Rahmani, Mehr Khalid
• Ismail, Muhammd
• Mahata, Chandreswar
• Abbas, Yawar
• Abbas, Haider
• Choi, Changhwan
• Mikhaylov, Alexey N.
• Shchanikov, Sergey A.
• Yang, Byung-Do
• Kim, Sungjun

Titel

Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers

Ist Teil von

• Micromachines (Basel), 2022-09, Vol.13 (9), p.1498

Ort / Verlag

Basel: MDPI AG

Erscheinungsjahr

2022

Link zum Volltext

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• In this paper, we demonstrate a device using a Ni/SiN/BN/p+-Si structure with improved performance in terms of a good ON/OFF ratio, excellent stability, and low power consumption when compared with single-layer Ni/SiN/p+-Si and Ni/BN/p+-Si devices. Its switching mechanism can be explained by trapping and de-trapping via nitride-related vacancies. We also reveal how higher nonlinearity and rectification ratio in a bilayer device is beneficial for enlarging the read margin in a cross-point array structure. In addition, we conduct a theoretical investigation for the interface charge accumulation/depletion in the SiN/BN layers that are responsible for defect creation at the interface and how this accounts for the improved switching characteristics.