Details

Autor(en) / Beteiligte

• Song, Ho-Jim
• Yun, Sang-Hyun
• Kim, Wha-Tek
• Min, Suk-Ki
• Lim, Han-Jo
• Park, Hong-Lee

Titel

Deep Levels in Undoped and ErCl 3 -Doped TlGaS 2 Single Crystals

Ist Teil von

• Japanese Journal of Applied Physics, 1993-12, Vol.32 (S3), p.610

Erscheinungsjahr

1993

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• TlGaS 2 and TlGaS 2 :ErCl 3 single crystals were grown by the Bridgman technique. The optical energy band gaps and the deep levels of the as-grown crystals were investigated by the optical absorption, thermally stimulated current (TSC), and, photo-induced current transient spectroscopy (PICTS) spectra. The electron traps (0.18±0.01 eV and 0.23±0.01 eV) and the hole traps (0.36±0.02 eV and 0.66±0.02 eV) are observed in TlGaS 2 single crystal. In the case of TlGaS 2 :ErCl 3 single crystal, two deep levels as donors are located at 0.15±0.01 eV and 0.25±0.01 eV and, one deep level as acceptor, at 0.64±0.02 eV.