Details

Autor(en) / Beteiligte

• Tang Xin-Yue
• Gao Hong
• Pan Si-Ming
• Sun Jian-Bo
• Yao Xiu-Wei
• Zhang Xi-Tian

Titel

Electrical characteristics of individual In-doped ZnO nanobelt field effect transistor

Ist Teil von

• Wuli xuebao, 2014-10, Vol.63 (19), p.197302

Erscheinungsjahr

2014

Beschreibungen/Notizen

• Back-gate field effect transistors based on In-doped ZnO individual nanobelts have been fabricated using the low-cost microgrid template method. The output (Ids-Vds) and transfer (Ids-Vgs) characteristic curves for the transistors are measured, and the mobility is derived to be 622 cm2· V-1· s-1. This value is obviously superior to those for most of materials including pure ZnO in the literature, and possible influence factors have also been discussed.