Details

Autor(en) / Beteiligte

• Liu, Po-Tsun
• Chou, Yi-Teh
• Hsu, Ting-Hao
• Huang, An-Di
• Chen, Bing-Mau

Titel

P-27: Novel AlNiLa Serves as Gate Electrodes of a-TFT for AMLCD

Ist Teil von

• SID International Symposium Digest of technical papers, 2010-05, Vol.41 (1), p.1322-1324

Ort / Verlag

Oxford, UK: Blackwell Publishing Ltd

Erscheinungsjahr

2010

Quelle

Wiley Online Library - AutoHoldings Journals

Beschreibungen/Notizen

• AlNiLa metallization technology is introduced for AMLCD as gate electrodes. Ni can effectively prevent Al diffusing into Si‐based layer while La can obviously increase uniformity during AlNiLa deposition than that of conventional Al‐Nd alloy. According to the electrical measurement results, the compatibility of AlNiLa in TFT has been verified.