Details

Autor(en) / Beteiligte

• Hortelano, V.
• Martínez, O.
• Jiménez, J.
• Snure, M.
• Lynch, C.
• Bliss, D.

Titel

Cathodoluminescence characterization of Si-doped orientation patterned GaAs crystals

Ist Teil von

• MRS proceedings, 2012, Vol.1396 (1), p.204-209, Article mrsf11-1396-o05-06

Ort / Verlag

New York, USA: Cambridge University Press

Erscheinungsjahr

2012

Beschreibungen/Notizen

• Orientation patterned (OP)-GaAs crystals are attractive materiasl for mid-infrared and terahertz lasers sources, using non linear optics frequency conversion from shorter wavelength sources. The optical propagation losses are critical to the fabrication of these sources; among the causes of optical losses the generation of defects and the incorporation of impurities must play a relevant role. The control of the incorporation of impurities and defects is, therefore, crucial to improve the performance of the OP-GaAs crystals as non linear optical materials. We present herein a cathodoluminescence (CL) analysis of OP-GaAS crystals intentionally doped with Si, in order to understand the incorporation paths of Si in the OP-GaAs crystals.