Details

Autor(en) / Beteiligte

• Jambois, O.
• Ramirez, J.M
• Berencen, Y.
• Navarro-Urrios, D.
• Hernández, S.
• Anopchenko, A.
• Marconi, A.
• Prtljaga, N.
• Daldosso, N.
• Pavesi, L.
• Colonna, J.-P.
• Fedeli, J.-M.
• Garrido, B.

Titel

Effect of the annealing treatments on the transport and electroluminescence properties of SiO 2 layers doped with Er and Si nanoclusters

Ist Teil von

• MRS proceedings, 2011, Vol.1289, Article mrsf10-1289-h05-11

Erscheinungsjahr

2011

Beschreibungen/Notizen

• ABSTRACT We studied the effect of RTP and furnace annealing on the transport properties and electroluminescence of Si-nc embedded in SiO 2 layers, and of Er ions coupled to Si-nc. The light emitting devices have been fabricated in a CMOS line by implantation of Si and Er in SiO 2 . The results show that for the same annealing temperature, furnace annealing decreases electrical conductivity and increases probability of impact excitation, which leads to an improved external quantum efficiency. Correlations between phenomenological transport models, annealing regimes, and erbium electroluminescence are observed and discussed.