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Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires
Ist Teil von
MRS proceedings, 2003, Vol.776, Article Q2.6
Ort / Verlag
New York, USA: Cambridge University Press
Erscheinungsjahr
2003
Link zum Volltext
Beschreibungen/Notizen
High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.