Details

Autor(en) / Beteiligte

• Mohammed, K. A.
• Talib, R. A.
• Bhavani, B.
• Al Hasan, N. H. J.
• Kareem, A.
• Alsultany, F. H.
• Zabibah, R. S.
• Alkhafaji, M. A.
• Sharma, S.

Titel

The role of Cu doping in properties of CdZnS thin films

Ist Teil von

• Chalcogenide letters, 2023-11, p.789-796

Erscheinungsjahr

2023

Link zum Volltext

Quelle

Free E-Journal (出版社公開部分のみ）

Beschreibungen/Notizen

• CdZnS thin films created via chemical bath deposition were examined to see how Cu doping affected their characteristics. Cu ions were added to the films in order to change their optical, structural, and morphological characteristics. These findings suggest that Cu doping can be used to modify the optical characteristics of CdZnS thin films. By using Xray diffraction (XRD) and the energy dispersive analysis of X-ray method (EDAX), we were able to investigate the compositional ratio as well as the structural features of the films. The field emission scanning electron microscopy (FESEM) technique was utilized in order to investigate the surface morphology of the produced films. The morphology of prepared films was fiber-like and in nanoscale. In addition, the UV–vis spectroscopy technique was utilized in order to characterize the optical properties of thin films. The prepared Cu-CdZnS film was found to have direct band gap equal to 2.64 eV and indirect gap equal to 2.4 eV.