Details

Autor(en) / Beteiligte

• Plis, Elena A.
• Liao, Meiyong

Titel

InAs/GaSb Type-II Superlattice Detectors

Ist Teil von

• Advances in Electronics (Hindawi), 2014-04, Vol.2014 (2014), p.1-12

Ort / Verlag

Cairo, Egypt: Hindawi Puplishing Corporation

Erscheinungsjahr

2014

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• InAs/(In,Ga)Sb type-II strained layer superlattices (T2SLs) have made significant progress since they were first proposed as an infrared (IR) sensing material more than three decades ago. Numerous theoretically predicted advantages that T2SL offers over present-day detection technologies, heterojunction engineering capabilities, and technological preferences make T2SL technology promising candidate for the realization of high performance IR imagers. Despite concentrated efforts of many research groups, the T2SLs have not revealed full potential yet. This paper attempts to provide a comprehensive review of the current status of T2SL detectors and discusses origins of T2SL device performance degradation, in particular, surface and bulk dark-current components. Various approaches of dark current reduction with their pros and cons are presented.