Details

Autor(en) / Beteiligte

• Ngai, J.H
• Walker, F.J
• Ahn, C.H

Titel

Correlated Oxide Physics and Electronics

Ist Teil von

• Annual review of materials research, 2014-01, Vol.44 (1), p.1-17

Ort / Verlag

Annual Reviews

Erscheinungsjahr

2014

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Transition metal oxides exhibit a range of correlated phenomena with applications to novel electronic devices that possess remarkable functionalities. This article reviews recent progress in elucidating both mechanisms that govern correlated behavior in transition metal oxides and advancements in device fabrication that have enabled strong correlations to be controlled through applied electric fields. Advancements in the growth of transition-metal-oxide films and artificial heterostructures have enabled superconductivity, magnetism, and metal-insulator transitions to be controlled in cuprates, manganites, and vanadates by using the electric field effect. In addition, interfaces between transition metal oxides have recently emerged as a setting in which strong correlations can be manipulated in two dimensions to realize unusual quantum-ordered phases. Finally, key relationships between structure and transport in ultrathin films of transition metal oxides have been elucidated. Coupling the structural degrees of freedom in oxides to applied electric fields thus opens new pathways to control correlated behavior in devices.