Details

Autor(en) / Beteiligte

• Park, Jee Ho
• Choi, Won Jin
• Oh, Jin Young
• Chae, Soo Sang
• Jang, Woo Soon
• Lee, Se Jong
• Song, Kie Moon
• Baik, Hong Koo

Titel

Low-Temperature, Aqueous-Solution-Processed Zinc Tin Oxide Thin Film Transistor

Ist Teil von

• Japanese Journal of Applied Physics, 2011-07, Vol.50 (7), p.070201-070201-3

Ort / Verlag

The Japan Society of Applied Physics

Erscheinungsjahr

2011

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We fabricate solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). The solution used is prepared by precipitating metal hydroxide using NaOH and dissolving it using NH 4 OH. The X-ray diffraction (XRD) data of the spin-coated ZTO film demonstrates an amorphous phase, and the atomic force microscopy (AFM) image shows a smooth surface. The device performance of solution-processed TFTs was analyzed as a function of annealing temperature. The fabricated TFTs were operated in the enhancement mode, and exhibited a carrier mobility of 3.03 cm 2 V -1 s -1 , a threshold voltage of 10.2 V, an on/off current ratio of $1.23\times 10^{7}$, a subthreshold slope of 0.78 V/decade, and high transparency (with ${\sim}90$% transmittance) at a low annealing temperature of 300 °C.