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DC--DC Converters Using Indium Gallium Zinc Oxide Thin Film Transistors for Mobile Display Applications
Ist Teil von
Japanese Journal of Applied Physics, 2010-03, Vol.49 (3), p.03CB05-03CB05-5
Ort / Verlag
The Japan Society of Applied Physics
Erscheinungsjahr
2010
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
DC--DC converters integrated into a panel are proposed for mobile display applications using indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The proposed positive DC--DC converter uses cross-coupled and diode-connected structures for a high output voltage and a high power efficiency, while the proposed negative DC--DC converter uses also a cross-coupled structure but with separated pumping capacitors for a negative output voltage and a high power efficiency. The simulated results show that the output voltage and power efficiency are 21.3 V and 69.5% for the positive DC--DC converter and $-5.1$ V and 56.1% for the negative DC--DC converter, respectively, at a supply voltage of 10 V and a load current of 250 \mbox{$\mu$}A. The measured results show that the output voltage and power efficiency of the proposed positive DC--DC converter are 20.8 V and 66.6%, respectively, under the same conditions as those for the simulated results.