Details

Autor(en) / Beteiligte

• Lee, You-Sang
• Byeon, Dae-Seok
• Han, Min-Koo
• Choi, Yearn-Ik

Titel

A New Lateral Dual-Gate Thyristor with Current Saturation

Ist Teil von

• Japanese Journal of Applied Physics, 2000-04, Vol.39 (4S), p.1979

Erscheinungsjahr

2000

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• A new lateral dual-gate thyristor was proposed and fabricated in order to eliminate the parasitic latch-up problem. The device exhibited the excellent current-saturation characteristic of a current density of 1200 A/cm 2 , even at the high anode-gate voltage of 29 V, through the elimination of the parasitic thyristor in the device structure. The device, which is suitable for power integrated circuits (PICs) due to its lateral structure, also exhibited good temperature characteristics appropriate for high-temperature operations.