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Thermally Stimulated Current and Polarization Fatigue in Pb(Zr,Ti)O 3 Thin Films
Ist Teil von
Japanese Journal of Applied Physics, 1998-09, Vol.37 (9S), p.5137
Erscheinungsjahr
1998
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
In order to clarify the origin of the polarization fatigue phenomena,
charge traps in ferroelectric Pb(Zr,Ti)O
3
(PZT) thin films
were measured using the thermally stimulated current (TSC) technique.
For polarization fatigued Pt/PZT/Pt/SiO
2
/Si(100) capacitors,
a peak of TSC was observed, and
the trap density estimated from the TSC data
increased as switching cycles increased.
Activation energy and density of the charge traps
were estimated to be 0.7–0.8 eV and
on the order of 10
18
cm
-3
,
respectively.
It was also observed that
degradation of remanent polarization of PZT
was improved by the TSC measurement process.
On the other hand, no TSC peak was observed for
fatigue free Ir/PZT/Ir/IrO
2
/SiO
2
/Si(100) capacitors.
From these results, it was suggested that
the main origin of the polarization fatigue phenomena
was the domain pinning caused by trapped charge carriers
injected by polarization reversal.