Details

Autor(en) / Beteiligte

• Lee, Byeong-Hoon
• Yun, Chong-Man
• Byeon, Dae-Seok
• Han, Min-Koo
• Choi, Yearn-Ik

Titel

A trench-gate silicon-on-insulator lateral insulated gate bipolar transistor with the p+ cathode well

Ist Teil von

• Japanese Journal of Applied Physics, 1995-02, Vol.34 (2B), p.854-859

Ort / Verlag

Tokyo: Japanese journal of applied physics

Erscheinungsjahr

1995

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• A trench-gate silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with the p + cathode well is proposed to improve the latch-up characteristics, and the improved characteristics are verified numerically by MEDICI simulation. It is found that the trench-gate SOI LIGBT exhibits at least 6 times larger latch-up capability than the conventional devices. The enhanced latch-up capability of the trench-gate SOI LIGBT is obtained due to the fact that the hole current in the device bypasses the resistance of the p body region which is the source of the latch-up and reaches the cathode via the p + cathode well.