Details

Autor(en) / Beteiligte

• DRESSICK, W. J
• CALVERT, J. M

Titel

Patterning of self-assembled films using lithographic exposure tools

Ist Teil von

• Japanese Journal of Applied Physics, 1993-12, Vol.32 (12B), p.5829-5839

Ort / Verlag

Tokyo: Japanese journal of applied physics

Erscheinungsjahr

1993

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• This paper presents an approach for fabricating surfaces with precise positional control of chemical functionalities at submicron resolutions using direct patterning of organosilane self-assembled monolayer films (SAFs) with lithographic exposure tools. Although the process is of general applicability, microelectronics applications are emphasized here. The suitability of monolayer SAFs for high resolution patterning is discussed and deep UV photochemical mechanisms for several classes of SAFs are presented. Selective electroless metallization of patterned SAFs provides sufficient plasma etch resistance and compatibility with current microelectronics processing technologies to allow fabrication of functioning Si MOSFET test structures. Unique features of the process, including an ability to utilize a variety of substrates and control metal film adhesion by judicious choice of the SAF, are discussed.