Japanese Journal of Applied Physics, 1991-05, Vol.30 (5B), p.L910-L913
1991
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Details
- Autor(en) / Beteiligte
- Titel
- GaAs/AlGaAs lensed light emitting diode by the meltback and regrowth in liquid phase epitaxy
- Ist Teil von
- Japanese Journal of Applied Physics, 1991-05, Vol.30 (5B), p.L910-L913
- Ort / Verlag
- Tokyo: Japanese journal of applied physics
- Erscheinungsjahr
- 1991
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- AlGaAs micro-lens was fabricated for light emitting diode (LED) applications using the liquid phase epitaxy (LPE) meltback technique. The lenses can be used to enhance the optical power of AlGaAs/GaAs LED's. The meltback technique using the LPE provides simple fabrication procedures which is not easily achieved in the conventional lensed structure.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0021-4922eISSN: 1347-4065DOI: 10.1143/jjap.30.l910Titel-ID: cdi_crossref_primary_10_1143_JJAP_30_L910