Details

Autor(en) / Beteiligte

• Alexeev, A. N.
• Krasovitsky, D. M.
• Petrov, S. I.
• Chaly, V. P.
• Mamaev, V. V.
• Sidorov, V. G.

Titel

Specific features of NH3 and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures

Ist Teil von

• Semiconductors (Woodbury, N.Y.), 2015, Vol.49 (1), p.92-94

Ort / Verlag

Moscow: Pleiades Publishing

Erscheinungsjahr

2015

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The specific features of how nitride HEMT heterostructures are produced by NH 3 and plasma-assisted (PA) molecular-beam epitaxy (MBE) are considered. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown with ammonia at extremely high temperatures (up to 1150°C) can drastically improve the structural perfection of the active GaN layers and reduce the dislocation density in these layers to values of 9 × 10 8 −1 × 10 9 cm −2 . The use of buffer layers of this kind makes it possible to obtain high-quality GaN/AlGaN heterostructures by both methods. At the same time, in contrast to ammonia MBE which is difficult to apply at T < 500°C (because of the low efficiency of ammonia decomposition), PA MBE is rather effective at low temperatures, e.g., for the growth of InAlN layers lattice-matched with GaN. The results obtained in the MBE growth of AlN/AlGaN/GaN/InAlN heterostructures by both PA-MBE and NH 3 -MBE with an extremely high ammonia flux are demonstrated.