Details

Autor(en) / Beteiligte

• Tyschenko, I. E.
• Voelskow, M.
• Cherkov, A. G.
• Popov, V. P.

Titel

Ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure

Ist Teil von

• Semiconductors (Woodbury, N.Y.), 2014-09, Vol.48 (9), p.1196-1201

Ort / Verlag

Moscow: Pleiades Publishing

Erscheinungsjahr

2014

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The ion-beam synthesis of InSb nanocrystals in the buried SiO 2 layer of a silicon-on-insulator structure is investigated. The distributions of In and Sb atoms after annealing at a temperature of T a = 500–1100°C are studied. It is established that the redistribution of implanted atoms is unsteadily dependent on the annealing temperature. The formation of InSb nanocrystals occurs at Ta ≥ 800°C near the Si/SiO 2 interface and at a depth corresponding to the mean paths R p . Analysis of the profiles of implanted atoms and of the structure and depth distribution of nanocrystals formed allows an inference regarding the two-stage character of formation of the InSb phase. In the initial stage, antimony precipitates are formed; further the precipitates serve as nuclei for indium and antimony to flow to them.