Details

Autor(en) / Beteiligte

• Orent, T. W.
• Wagner, R. A.

Titel

Investigation of the chemical bonding of Cr and Ti to silicon nitride

Ist Teil von

• Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1983-07, Vol.1 (3), p.844-849

Erscheinungsjahr

1983

Quelle

AIP Journals

Beschreibungen/Notizen

• The adhesion characteristics of rf‐sputtered Cr/Cu and Ti/Cu films to polished silicon nitride substrates were studied. As‐deposited samples showed lower rupture strengths than Cr/Cu on unpolished alumina, but Ti samples that had been annealed above 500 °C and Cr films on substrates that had been prefired in air had higher rupture strengths than Cr/Al2O3. The compositions of the metal/substrate interfacial regions were studied by Auger depth profiling and by x‐ray photoelectron spectroscopy, and the results were correlated with the adhesion measurements. Chromium did not react extensively with the substrate during deposition, but it did react with the silicon oxynitride surface layer formed during prefiring. On the other hand, Ti reduced the silicon nitride during deposition to produce TiN and free Si. Above 500 °C the free silicon reacted with additional Ti at the Ti/TiN interface to form a silicide.