Details

Autor(en) / Beteiligte

• Voss, Lars F.
• Frye, Clint D.
• Bora, Mihail
• Hall, David L.
• Grivickas, Paulius V.
• Conway, Adam M.

Titel

Maskless random antireflective nanotexturing of single crystal SiC

Ist Teil von

• Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2019-07, Vol.37 (4)

Ort / Verlag

United States: American Vacuum Society

Erscheinungsjahr

2019

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• Random nanotexturing of optics and semiconductors has proven to be a highly effective way to produce high transmittivity, low reflective surfaces. Here, the authors report a one-step technique using SF6 reactive ion etching to produce nanotexturing of SiC. The effect of etching process power and time is optimized to demonstrate sub-1% specular reflectance and below 5% total reflectance over the 400–2000 nm spectral range. The technique is applied to compare measurements of a photoconductive switch with untreated and treated surfaces. Using a white light source emitting in the range 400–750 nm, the authors show that the decrease in specular reflectivity results in a 20% increase in the photocurrent response.