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Nitride etching with hydrofluorocarbons. I. Selective etching of nitride over silicon and oxide materials by gas discharge optimization and selective deposition of fluorocarbon polymer
Ist Teil von
Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-09, Vol.35 (5)
Erscheinungsjahr
2017
Quelle
AIP Journals Complete
Beschreibungen/Notizen
Selective etching of silicon nitride over silicon and silicon oxide is one of the most
critical processes in the fabrication of complementary metal–oxide–semiconductor devices.
In a typical spacer process, the gate is electrically isolated from the source and drain
region by the deposition of thin nitride. A plasma etch is employed to remove the nitride
from the source/drain regions without or with minimal damage to the exposed surfaces. The
authors show that the typical plasma process that enables this process is based on the
oxidation rate of silicon and has many limitations when applying this process to devices
of 30 nm critical dimension (CD) or lower. The authors show novel gas discharges with
which nitride can be etched differently, in particular, because the etch rates are
controlled by selective polymer deposition. The novel etch mechanism is explained in
detail and advantages and challenges are discussed, in particular. Selected studies of the
feedgas chemistry lead to optimized dissociation as evidenced by the respective etch
selectivities. The authors demonstrate that the novel etch mechanism is able to reduce
nitride thinning and substrate damage significantly, enabling further pitch and CD scaling
of spacer etch when employing this novel chemistry C4H9F. The
authors also show that because of these advantages, the novel chemistry is a very
promising candidate to enlarge the process window for spacer processes of nonplanar
devices.
Sprache
Englisch
Identifikatoren
ISSN: 2166-2746
eISSN: 2166-2754
DOI: 10.1116/1.5003824
Titel-ID: cdi_crossref_primary_10_1116_1_5003824
Format
–
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