Details

Autor(en) / Beteiligte

• Kikuta, Daigo
• Itoh, Kenji
• Narita, Tetsuo
• Mori, Tomohiko

Titel

Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device

Ist Teil von

• Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-01, Vol.35 (1)

Erscheinungsjahr

2017

Link zum Volltext

Quelle

American Institute of Physics

Beschreibungen/Notizen

• In this study, the authors systematically investigate the electrical properties and reliability of Al2O3/SiO2 nanolaminate films with different compositions on GaN. Leakage current in the nanolaminates was suppressed by the higher SiO2 content due to the enhancement of conduction band offset between the nanolaminate and GaN. The interface-trap density (D it) at the nanolaminates/GaN was as good as those at the Al2O3/GaN and SiO2/GaN interfaces. The lifetime of the nanolaminates increased with increasing SiO2 content. In addition, the authors demonstrated that the nanolaminate with thickness ratio of 0.21 had almost same lifetime as the Al2O3 under same equivalent electric field.