Details

Autor(en) / Beteiligte

• Jia, Ye
• Dabiran, Amir M.
• Singisetti, Uttam

Titel

Electrical characterization of atomic layer deposited Al2O3/InN interfaces

Ist Teil von

• Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2016-01, Vol.34 (1)

Erscheinungsjahr

2016

Quelle

AIP Scitation Journals Complete

Beschreibungen/Notizen

• In this article, the authors report the electrical properties of atomic layer deposited Al2O3/InN interfaces evaluated by capacitance–voltage (C-V), current–voltage (I-V), and x-ray photoemission spectroscopy techniques. I-V characteristics show low leakage currents (300 pA/μm2) in the deposited dielectrics. However, C-V curves show that ex situ surface treatments with hydrochloric acid, ammonium sulfide, and hydrobromic acid has little effect on the surface electron accumulation layer, with an estimated interface state density over 4×1013/cm2. The effect of the surface treatments on valance band offset between Al2O3 and InN was also investigated.